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KI5903DC - Drain-Source Voltage Vds -20V Gate-Source Voltage Vgs -12V

KI5903DC_7302965.PDF Datasheet


 Full text search : Drain-Source Voltage Vds -20V Gate-Source Voltage Vgs -12V


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PART Description Maker
KO8822 VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
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KI6968BEDQ Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V
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KI1903DL Drain-source voltage Vds -20V Gate-source voltage Vgs -12V
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KI1553DL PIN Configuration Drain-Source Voltage Vds 20V
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AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
Advanced Linear Devices, Inc.
PST993 PST993C PST993D PST993E PST993F PST993G PST MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
KI4501ADY TrenchFET Power MOSFET Drain-Source Voltage Vds 30V
TY Semiconductor Co., Ltd
STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST    SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
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ADM3491 ADM3491AR ADM3491AN ADM3491ARU 3.3 V/ Full Duplex/ 840 uA 20 Mbps/ EIA RS-485 Transceiver
3.3 V, Full Duplex, 840 uA 20 Mbps, EIA RS-485 Transceiver
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:90V; Continuous Drain Current, Id:0.86A; On-Resistance, Rds(on):4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-205AD; Drain-Source Breakdown Voltage:90V RoHS Compliant: No
3.3V, Full Duplex, 840uA, 20Mbps, EIA RS-485 Transceiver
Analog Devices, Inc.
HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
INTERSIL[Intersil Corporation]
 
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